المسار :OKDatasheet > اشباه الموصلات datasheet > Motorola Datasheet > MTB3N60E
MTB3N60E المضاربه : TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E مماثلة
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
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- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E Datasheet والمضاربه
الصانع : Motorola
التعبءه : DPAK
دبابيس : 4
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 81 KB
التطبيق : TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E تحميل PDF