المسار :OKDatasheet > اشباه الموصلات datasheet > Motorola Datasheet > MTB30P06V
MTB30P06V المضاربه : TMOS V power field effect transistor
MTB30P06V مماثلة
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB30P06V Datasheet والمضاربه
الصانع : Motorola
التعبءه : DPAK
دبابيس : 4
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 271 KB
التطبيق : TMOS V power field effect transistor
MTB30P06V تحميل PDF