WMBT5551LT1 المضاربه : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

WMBT5551LT1 مماثلة

WMBT3904
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WMBT3904
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WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3906
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WMBT5401LT1
- PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
WMBT5551LT1
- NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
WMBTA42
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBT5551LT1 Datasheet والمضاربه

الصانع : WingShing

التعبءه : SOT-23

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 39 KB

التطبيق : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V