WMBT3904 المضاربه : NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

WMBT3904 مماثلة

WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3904
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WMBT3906
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WMBT3906
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WMBT5401LT1
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WMBTA42
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WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBT3904 Datasheet والمضاربه

الصانع : WingShing

التعبءه : SOT-89

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 72 KB

التطبيق : NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A