F1209 مماثلة

  • F1206
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1207
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1208
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1209
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet والمضاربه

الصانع : Polyfet RF 

التعبءه :  

دبابيس : 8 

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 39 KB

التطبيق : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1209 تحميل PDF