F1206 المضاربه : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 مماثلة

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 39 KB

التطبيق : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor