F1069 المضاربه : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069 مماثلة

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 39 KB

التطبيق : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor