F1066 المضاربه : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1066 مماثلة

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1066 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 8

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 42 KB

التطبيق : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor