F1006 المضاربه : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1006 مماثلة

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1006 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 4

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 40 KB

التطبيق : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor