MTW26N15E مماثلة

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    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
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  • MTW24N40E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW26N15E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW26N15E Datasheet والمضاربه

الصانع : Motorola 

التعبءه : TO-247AE 

دبابيس : 4 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 175 KB

التطبيق : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW26N15E تحميل PDF