MTW20N50E مماثلة

  • MTW20N50E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW23N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW24N40E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW26N15E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW20N50E Datasheet والمضاربه

الصانع : Motorola 

التعبءه : TO-247AE 

دبابيس : 4 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 212 KB

التطبيق : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW20N50E تحميل PDF