MTW10N100E المضاربه : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E مماثلة

MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW14N50E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW16N40E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Datasheet والمضاربه

الصانع : Motorola

التعبءه : TO-247AE

دبابيس : 4

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 211 KB

التطبيق : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole