BUZ907D مماثلة

  • BUZ903P
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
  • BUZ906D
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
  • BUZ902D
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ908
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ901X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ900X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ907D Datasheet والمضاربه

الصانع : Magnatec 

التعبءه : TO-3 

دبابيس : 2 

درجة الحراره : دقيقة 0 °C | الاقصى 150 °C

حجم : 27 KB

التطبيق : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. 

BUZ907D تحميل PDF