BUZ900X4S المضاربه : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S مماثلة

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BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
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BUZ902
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BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
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- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Datasheet والمضاربه

الصانع : Magnatec

التعبءه : SOT227

دبابيس : 4

درجة الحراره : دقيقة 0 °C | الاقصى 150 °C

حجم : 36 KB

التطبيق : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.