BUZ901DP المضاربه : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.

BUZ901DP مماثلة

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ901DP Datasheet والمضاربه

الصانع : Magnatec

التعبءه : TO-3PBL

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 150 °C

حجم : 42 KB

التطبيق : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.