المسار :OKDatasheet > اشباه الموصلات datasheet > Magnatec Datasheet > BUL52B
BUL52B المضاربه : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B مماثلة
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B Datasheet والمضاربه
الصانع : Magnatec
التعبءه : TO220
دبابيس : 3
درجة الحراره : دقيقة 0 °C | الاقصى 150 °C
حجم : 20 KB
التطبيق : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B تحميل PDF