BUL52A مماثلة

  • BUL52A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL52B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.

BUL52A Datasheet والمضاربه

الصانع : Magnatec 

التعبءه : TO220 

دبابيس : 3 

درجة الحراره : دقيقة 0 °C | الاقصى 150 °C

حجم : 20 KB

التطبيق : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. 

BUL52A تحميل PDF