المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFSL17N20D
IRFSL17N20D المضاربه : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
IRFSL17N20D مماثلة
- IRFS17N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFS33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
- IRFS38N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
- IRFS4710
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFSL17N20D Datasheet والمضاربه
الصانع : IR
التعبءه : TO-262
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 213 KB
التطبيق : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
IRFSL17N20D تحميل PDF