المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFS59N10D
IRFS59N10D المضاربه : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D مماثلة
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- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Datasheet والمضاربه
الصانع : IR
التعبءه : DDPak
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 151 KB
التطبيق : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D تحميل PDF