المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFB9N30A
IRFB9N30A المضاربه : HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
IRFB9N30A مماثلة
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
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- IRFB18N50K
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- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
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- IRFB260N
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- IRFB31N20D
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- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFB9N30A Datasheet والمضاربه
الصانع : IR
التعبءه :
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 150 KB
التطبيق : HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
IRFB9N30A تحميل PDF