المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFB11N50A
IRFB11N50A المضاربه : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
IRFB11N50A مماثلة
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFB11N50A Datasheet والمضاربه
الصانع : IR
التعبءه :
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 109 KB
التطبيق : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
IRFB11N50A تحميل PDF