المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRF3708
IRF3708 المضاربه : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A
IRF3708 مماثلة
- IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3708 Datasheet والمضاربه
الصانع : IR
التعبءه :
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 151 KB
التطبيق : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A
IRF3708 تحميل PDF