IRF3205L مماثلة

  • IRF3205
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205L
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205S
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF3315
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3205L Datasheet والمضاربه

الصانع : IR 

التعبءه : TO-262 

دبابيس : 3 

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 175 KB

التطبيق : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A 

IRF3205L تحميل PDF