IRF3515L المضاربه : HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.045 Ohm, ID = 41A

IRF3515L مماثلة

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- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
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- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3515L Datasheet والمضاربه

الصانع : IR

التعبءه : TO-262

دبابيس : 3

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 138 KB

التطبيق : HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.045 Ohm, ID = 41A