MJE13003 المضاربه : NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V

MJE13003 مماثلة

MJE13002A
- Silicon NPN triple diffused MESA type. Electronic transformers, power switching circuit. Vcbo=600V, Vceo=400V, Vebo=9V
MJE13003
- NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
MJE13005B
- NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V

MJE13003 Datasheet والمضاربه

الصانع : WingShing

التعبءه : TO-126

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 29 KB

التطبيق : NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V