BU407 مماثلة

  • BU406
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU406D
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
  • BU406H
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU407
    • Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
  • BU408
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU407 Datasheet والمضاربه

الصانع : WingShing 

التعبءه : TO-220 

دبابيس : 3 

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 70 KB

التطبيق : Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose. 

BU407 تحميل PDF