BDX54C المضاربه : PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V

BDX54C مماثلة

BDX53
- NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V
BDX53A
- NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
BDX53B
- NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
BDX53C
- NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
BDX54
- PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V
BDX54A
- PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V

BDX54C Datasheet والمضاربه

الصانع : WingShing

التعبءه : TO-220

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 27 KB

التطبيق : PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V