MJE3055T مماثلة

  • MJE3055T
    • NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.

MJE3055T Datasheet والمضاربه

الصانع : Usha 

التعبءه : TO-220 

دبابيس : 3 

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 52 KB

التطبيق : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. 

MJE3055T تحميل PDF