UT7Q512K-UWC المضاربه : 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.

UT7Q512K-UWC مماثلة

UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UWC Datasheet والمضاربه

الصانع : UTMC

التعبءه : Ceramic flatpack

دبابيس : 32

درجة الحراره : دقيقة -40 °C | الاقصى 125 °C

حجم : 117 KB

التطبيق : 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.