RC30S10G المضاربه : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.

RC30S10G مماثلة

RC30S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
RC30S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
RC30S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
RC30S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
RC30S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
RC30S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.

RC30S10G Datasheet والمضاربه

التعبءه :

دبابيس : 0

درجة الحراره : دقيقة -50 °C | الاقصى 150 °C

حجم : 18 KB

التطبيق : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.