RC10S02G المضاربه : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.

RC10S02G مماثلة

RC10S01
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
RC10S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

RC10S02G Datasheet والمضاربه

التعبءه :

دبابيس : 0

درجة الحراره : دقيقة -50 °C | الاقصى 150 °C

حجم : 15 KB

التطبيق : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.