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STH8N80 مماثلة

  • STH8N80
    • Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
  • STH8N80FI
    • Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R
  • STH8NA60FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
  • STH8NB90FI
    • N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET

STH8N80 Datasheet والمضاربه

الصانع : ST Microelectronics 

التعبءه : TO-218 

دبابيس : 0 

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 379 KB

التطبيق : Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C 

STH8N80 تحميل PDF