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STH60N10 مماثلة

  • STH60N10
    • Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
  • STH60N10FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6NA80FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH60N10 Datasheet والمضاربه

الصانع : ST Microelectronics 

التعبءه : TO-218 

دبابيس : 0 

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 270 KB

التطبيق : Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C 

STH60N10 تحميل PDF