المسار :OKDatasheet > اشباه الموصلات datasheet > ST Microelectronics Datasheet > MJD127-1
MJD127-1 المضاربه : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 مماثلة
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 Datasheet والمضاربه
الصانع : ST Microelectronics
التعبءه : TO-251
دبابيس : 3
درجة الحراره : دقيقة -65 °C | الاقصى 150 °C
حجم : 100 KB
التطبيق : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 تحميل PDF