FX855 المضاربه : N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application

FX855 مماثلة

FX851
- "P-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application"
FX852
- N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application
FX854
- P-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application
FX855
- N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application

FX855 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2119

دبابيس : 6

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 148 KB

التطبيق : N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application