FC111 المضاربه : PNP epitaxial planar silicon composite transistor, switching application

FC111 مماثلة

FC11
- N-channel junction silicon FET, low-frequency general-purpose amp, differential amp application
FC110
- NPN epitaxial planar silicon transistor, switching application
FC111
- PNP epitaxial planar silicon composite transistor, switching application
FC113
- PNP epitaxial planar silicon composite transistor, switching application
FC114
- NPN epitaxial planar silicon composite transistor, switching application
FC115
- PNP epitaxial planar silicon composite transistor, switching application
FC116
- NPN epitaxial planar silicon composite transistor, switching application
FC117
- PNP epitaxial planar silicon composite transistor, low-frequency general-purpose amp application

FC111 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2066

دبابيس : 5

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 60 KB

التطبيق : PNP epitaxial planar silicon composite transistor, switching application