2SK932 المضاربه : N-channel junction silicon FET, high-frequency, low-noise amp application

2SK932 مماثلة

2SK932
- N-channel junction silicon FET, high-frequency, low-noise amp application
2SK937
- N-channel junction silicon FET, high-frequency, general-purpose amp application

2SK932 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2050

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 85 KB

التطبيق : N-channel junction silicon FET, high-frequency, low-noise amp application