2SK1906 المضاربه : N-channel MOS silicon FET, very high-speed switching application

2SK1906 مماثلة

2SK1052
- N-channel MOS silicon FET, very high-speed switching application
2SK1065
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1066
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1067
- "N-channel MOS silicon FET, FM tuner, VHF-band amp application"
2SK1068
- N-channel junction silicon FET, impedance conversion application
2SK1069
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1332
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1413
- N-channel MOS silicon FET, high-voltage, high-speed switching application

2SK1906 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2063

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 92 KB

التطبيق : N-channel MOS silicon FET, very high-speed switching application