2SC3778 المضاربه : NPN epitaxial planar silicon transistor, UNF low-noise amp, wide-band amp application

2SC3778 مماثلة

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3778 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2004A

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 108 KB

التطبيق : NPN epitaxial planar silicon transistor, UNF low-noise amp, wide-band amp application