2SC3647 المضاربه : NPN epitaxial planar silicon transistor, high-voltage switching application

2SC3647 مماثلة

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
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2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3647 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2038

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 138 KB

التطبيق : NPN epitaxial planar silicon transistor, high-voltage switching application