2SC2362 المضاربه : "NPN epitaxial planar silicon transistor, high voltag, low-noise amp application"

2SC2362 مماثلة

2SC2078
- NPN epitaxial planar silicon transistor, 27 MHz RF power amp application
2SC2314
- NPN epitaxial planar silicon transistor, 27 MHz CB transceiver driver application
2SC2344
- NPN epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SC2362
- "NPN epitaxial planar silicon transistor, high voltag, low-noise amp application"
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2814
- NPN transistor for high-frequency general-purpose amplifier applications
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2839
- NPN transistor for HF amplifier applications

2SC2362 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2003A

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 139 KB

التطبيق : "NPN epitaxial planar silicon transistor, high voltag, low-noise amp application"