2SA1209 المضاربه : PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application

2SA1209 مماثلة

2SA1011
- PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SA1016
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1016K
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1177
- PNP epitaxial planar silicon transistor, HF amp application
2SA1207
- PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application
2SA1208
- PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application
2SA1209
- PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application
2SA1209
- PNP transistors 160V/140mA high-voltage switching and AF 100W predriver applications

2SA1209 Datasheet والمضاربه

الصانع : SANYO

التعبءه : 2009A

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 114 KB

التطبيق : PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application