F2047 المضاربه : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2047 مماثلة

F2041
- 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2046
- 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2047
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2048
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2047 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 6

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 39 KB

التطبيق : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor