okDatasheet.com

F2001 مماثلة

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 Datasheet والمضاربه

الصانع : Polyfet RF 

التعبءه :  

دبابيس : 2 

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 40 KB

التطبيق : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2001 تحميل PDF