F1174 المضاربه : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 مماثلة

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 4

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 49 KB

التطبيق : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor