F1070 مماثلة

  • F1070
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1072
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1074
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1076
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1076
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1077
    • 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Datasheet والمضاربه

الصانع : Polyfet RF 

التعبءه :  

دبابيس : 4 

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 41 KB

التطبيق : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1070 تحميل PDF