F1022 مماثلة

  • F1020
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1021
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1022
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1027
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1022 Datasheet والمضاربه

الصانع : Polyfet RF 

التعبءه :  

دبابيس : 4 

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 41 KB

التطبيق : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1022 تحميل PDF