F1019 المضاربه : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 مماثلة

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 Datasheet والمضاربه

الصانع : Polyfet RF

التعبءه :

دبابيس : 4

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 41 KB

التطبيق : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor