المسار :OKDatasheet > اشباه الموصلات datasheet > Philips Datasheet > PHX2N50E
PHX2N50E المضاربه : PowerMOS transistor. Avalanche energy rated.
PHX2N50E مماثلة
- PHX23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX2N50E Datasheet والمضاربه
الصانع : Philips
التعبءه : SOT186A
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 85 KB
التطبيق : PowerMOS transistor. Avalanche energy rated.
PHX2N50E تحميل PDF