VTE3322LA المضاربه : GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3322LA مماثلة

VTE3322LA
- GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3324LA
- GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3372LA
- "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
VTE3374LA
- GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3322LA Datasheet والمضاربه

الصانع : PerkinElmer

التعبءه : T-1

دبابيس : 2

درجة الحراره : دقيقة -40 °C | الاقصى 100 °C

حجم : 24 KB

التطبيق : GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).